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POSTER PRESENTATIONS

Please do not exceed the A0 size (841 mm x 1189 mm) for the poster presentation.

 

POSTERS
P1
Effect of Gamma Irradiation on deep levels detected by DLTS in GaAsxN1-x with different Nitrogen concentration
N. Al Saqri, M. Aziz, J. F. Felix, D. L. da Cunha, R. H. Mari, D. Jameel , W.M. de Azevedo, E.F. da Silva jr, D. Taylor, M. Henini
P2
Trapping and escape time in p-i-n GaInNAs/GaAs multiple quantum wells structures
H. M. Khalil, S. Mazzucato, N. Balkan
P3
Effect of Post Growth Thermal Annealing on Deep Level Defects in MBE Grown Dilute Nitride
Ga1-xInxNyAs1-y p-i-n Structures

D.A. Jameel, M. Aziz, R. H. Mar, J. Francisco Felix, N. Al saqri, S. Tan, D. Taylor, M. Henini
P4
Optical and Magneto-Optical Properties of GaAsBi Layers Grown by Molecular Beam Epitaxy
H.V.A. Galeti, Y. Galvão Gobato, V. Orsi Gordo, M.P.F. de Godoy, R. Kudraviec, O.M. Lemine, A.Alkaoud, M. Henini
P5
Spin Effects in InGaAsN/GaAs Quantum Wells Grown by Molecular Beam Epitaxy
H.V.A. Galeti, Y. Galvão Gobato, M.P.F. de Godoy, V. Orsi Gordo, L. Kiyoshi Sato de Herval, A. Khatab, M. Henini, O.M. Lemine, M. Sadeghi, S. Wang
P6
Determination of the electron effective mass in AlInN/AlN/GaN heterostructures by using the quantum Hall effect measurements
E. Tiras, S. Ardali, E. Arslan, E. Ozbay
P7
Impact of the temperature on the performances of GaInNAs-based PBG waveguide modulators
G. Calò, D. Alexandropoulos, V. Petruzzelli
P8
Experimental investigation and numerical modelling of photocurrent oscillations in GaInNAs/GaAs p-i-n photodiodes
B. Royall, S. Mazzucato, H. Khalil, A. Erol, Y. Ergun, M. Hugues, M. Guina, N. Balkan
P9
Spectral Photoconductivity Studies on GaAs1-xBi x Epilayers
M. Aslan, V. Bahrami, T. Tiedje
P10
Thermal annealing- and Nitrogen-induced effects on electronic transport in n-and p-type modulation doped GaInNAs/GaAs quantum well structures
O. Donmez, F. Sarcan, A. Erol, M. Gunes, M. C. Arikan, J. Puusitinen, M. Guina
P11
Optical properties of GaBiAs ternary alloys
F. Sarcan, A. Erol, M. C. Arıkan, C. Fontaine
P12
GaAsPN alloys for optoelectronics on Silicon
H. Carrere, A. Balocchi, D. Lagarde, T. Amand and X. Marie
P13
High Field Hot Electron Energy Relaxation in InGaN/GaN Samples
S. Mutlu, S. Ardali, E. Tiras, N. Balkan
P14
Identification of four-hydrogen complexes in In-rich InGaN alloys using Photoluminescence, x-ray absorption, and density functional theory
M. De Luca, G. Pettinari, G. Ciatto, L. Amidani, F. Filippone, A. Polimeni, F. Boscherini , A . Amore Bonapasta, M. Capizzi
P15
Hot Electron Energy Relaxation in
Al0.83 In0.17 N/AlN/GaN heterostructure

S. Ardali, S. Mutlu, E. Tiras, E. Arslan, E. Ozbay
P16
Photoreflectance and photoluminescence studies of GaAsBi layers and quantum wells
J. Kopaczek, R. Kudrawiec, J. Misiewicz, F. Bastiman
P17
Gain in electrically-driven 1.3 um dilute nitride VCSOAs
S.B. Lisesivdin, N. A. Khan , S. Mazzucato , N. Balkan, M. J. Adams
P18
GaInNAsSb/GaAs semiconductor optical amplifiers and laser diodes
V.M. Korpijärvi, D. Fitsios, G. Giannoulis, J. Viheriälä, J. Mäkelä, A. Laakso, N. Iliadis, M. Spyropoulou, G.T. Kanellos, N. Pleros, M. Guina
P19
Time-resolved photoluminescence study on GaNAsSb solar cells
A. Gubanov, V. Polojärvi, A. Aho, A. Tukiainen, W. Zhang, A. Schramm, M. Guina
P20
Morphology and electronic properties of site-controlled InAs quantum dots
T.V. Hakkarainen, E. Luna, A. Schramm, J. Tommila, M. Guina
P21
A study on negative differantial resistance in n- and p-type GaInNAs/GaAs QWs
L.B. Buklu, A. Erol, M.C. Arıkan, J. Puustinen, M. Guina
P22
Performance Prediction of Quantum Dots Based Highly Resonant Optical Amplifiers
M. Vasileiadis, D. Alexandropoulos , C.(T) Politi, N. Vaino
P23
Investigation of GaBiAs alloy using Raman spectroscopy
E.Akalın, A. Erol, F. Sarcan, M.C.Arıkan, C. Fontaine
P24
Photoluminescence Redshift Relative to Photoabsorption in III-V-Nitride Structures
R. Brazis

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Size of the poster board