Home

Scope

Committees

Programme

Social programme

Registration

Proceedings

Invited Speakers

Important Dates

Venue

Accommodation

Travel

Sponsorship

Contact Us

 

INVITED SPEAKERS

 

Eoin O'Reilly, Tyndall National Institute, Ireland

"Valence band structure of dilute bismide alloys for optoelectronic device applications"

Helene Carrere, INSA, France

"Optical and spin properties of GaAsBi alloys"

Peter Ludewig, Philipps-Universität, Germany

"Ga(AsBi)/(AlGa)As heterostructures and laser diodes grown by MOVPE"

Janne Konttinen, EpiCrystals, Inc., Finland

"Frequency-converted dilute nitride laser diodes for mobile display applications"

Stefano Sanguinetti, University of Milano-Bicocca, Italy

"3D heteroepitaxy of Ge and GaAs on patterned Si substrates: a new monolithic integration strategy"

Elyahou Kapon, EPFL Lausanne

"Low-Dimensional Dilute Nitride InGaAsN/GaAs Heterostructures"